작성일
2023.04.10
수정일
2023.08.18
작성자
강재욱
조회수
120

(176) V.V. Satale, N. Kumar, H.B. Lee, M.M. Ovhal, S. Chowdhury, B. Tyagi, A. Mohamed, and J.-W. Kang* "Spray-Assisted Deposition of SnO2 Electron Transport Bilayer for Efficient Inkjet-Printed Perovskite Solar Cells" Inorganic Chemistry Frontier. 10, 3558–3567 (2023)

(176) V.V. Satale, N. Kumar, H.B. Lee, M.M. Ovhal, S. Chowdhury, B. Tyagi, A. Mohamed, and J.-W. Kang* "Spray-Assisted Deposition of SnO2 Electron Transport Bilayer for Efficient Inkjet-Printed Perovskite Solar Cells" Inorganic Chemistry Frontier. 10, 3558–3567 (2023) 첨부 이미지

Developing an efficient electron transport layer (ETL) through structural modification is essential to produce high-performance perovskite solar cell (PSC) devices. Specifically, the ETL should exhibit low defects, high optical transparency, and charge selectivity for ideal electron transport. Herein, we demonstrate (i) the low-temperature fabrication of tin oxide (SnO2) ETLs with a bilayer structure, and (ii) inkjet-printing of triple-cation perovskite film. Through the combined use of spin-coating and spray deposition, the optimized SnO2-bilayer ETL shows a nano-granule-textured surface, noticeably lesser defects, and cascade conduction band position with the inkjet-printed (IJP) perovskite. The champion IJP PSC device, based on the SnO2-bilayer ETL recorded an outstanding power conversion efficiency (PCE) of ~16.9%, which is significantly higher than the device based on the conventional SnO2 ETL (PCE ~14.8%). The improved photovoltaic performance of the SnO2-bilayer-based PSC arises mainly from more efficient charge transport and suppressed recombination at the ETL/perovskite interface. The SnO2-bilayer ETL and IJP-perovskite films demonstrated herein can be potentially used for large-scale manufacturing of PSC modules.


Submission: 2023.03.31

Publicaion: 2023. 06. 21


DOI
https://doi.org/10.1039/D3QI00599B
첨부파일
첨부파일이(가) 없습니다.
다음글
(177) W. Yang, G. Park, A. Liu, H.B. Lee, J.-W. Kang*, H. Zhu* and Y.-Y. Noh* "Fluorinated Organic A-Cation Enabling High-Performance Hysteresis-Free 2D/3D Hybrid Tin Perovskite Transistor" Adv. Funct. Mater. 33, 2303309 (2023)
강재욱 2023-05-02 22:25:26.0
이전글
(175) S. He, H.B. Lee, K.-J. Ko, N. Kumar, J.-H. Jang, S.-O. Cho, M. Song, W. Zhou, B.-J. Lee, J.-H. Lee* and J.-W. Kang* "Optical Engineering of FAPbBr3 Nanocrystals via Conjugated Ligands for Light-Outcoupling Enhancement in Perovskite Light-Emitting Diodes" Adv. Opt. Mater. 11, 2300486 (2023)
강재욱 2023-02-28 15:33:35.0